FILM THICKNESS MONITORING METHOD, FILM THICKNESS MONITORING DEVICE, AND SEMICONDUCTOR MANUFACTURING APPARATUS

摘要

In accordance with an embodiment, a film thickness monitoring method includes applying light to a substrate, which is a processing target, in a semiconductor manufacturing process involving rotation of the substrate, detecting reflected light from the substrate, and calculating a thickness of a film on the substrate. The thickness of the film is calculated from intensity of the reflected light detected in an identified time zone in which incident light passes a desired region on the substrate during the semiconductor manufacturing process.

主权项

1. A film thickness monitoring method comprising:
applying light to a substrate, which is a processing target, in a semiconductor manufacturing process involving rotation of the substrate; detecting reflected light from the substrate; and identifying a time zone in which incident light passes a desired region on the substrate during the semiconductor manufacturing process, and calculating a thickness of a film on the substrate from intensity of the reflected light detected in the identified time zone.