| 摘要 |
The present invention is provided with: a step (S11) for preparing a silicon carbide substrate; a step (S12) for forming a first silicon carbide semiconductor layer on the silicon carbide substrate using a first starting material gas; a step (S13) for forming a second silicon carbide semiconductor layer on the first silicon carbide semiconductor layer using a second starting material gas. In the step (S12) for forming the first silicon carbide semiconductor layer, and in the step (S13) for forming the second silicon carbide semiconductor layer, an ammonia gas is used as a dopant gas, and the starting material gas having a ratio (C/Si) of 1.6-2.2 is used, said ratio being the number of carbon atoms with respect to the number of silicon atoms in the first starting material gas. |
