METHOD FOR DICING SEMICONDUCTOR WAFER

摘要

The present invention relates to a method of dicing a semiconductor wafer which minimizes the generation of a burr and a pickup defect by controlling a cutting depth in a dicing process. A method of dicing a semiconductor wafer according to an embodiment of the present invention, includes a step of cutting a semiconductor wafer where a base film, a bonding martial layer, and a wafer are successively laminated from a lower part with a dicing blade; a step of expanding the semiconductor wafer which is cut; and a step of emitting an ultraviolet ray to the base film of the expanded semiconductor wafer and then picking up individual chips separated by the cutting of the semiconductor wafer. The depth of the cutting is 5 to 95% of the thickness of the bonding layer from the uppermost part of the semiconductor wafer.