METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device which includes forming first and second gate patterns, forming first and second sidewall spacers on sidewalls of the first and second gate patterns respectively, implanting a first impurity into the semiconductor substrate, forming a third sidewall spacer on the first sidewall spacer and a fourth sidewall spacer on the second sidewall spacer in such a manner that the third sidewall spacer is in contact with the fourth sidewall spacer between the first and second gate patterns, implanting a second impurity into the semiconductor substrate, and removing the third and the fourth sidewall spacers.

主权项

1. A method of manufacturing a semiconductor device comprising:
forming a first gate pattern in a first region of a semiconductor substrate and a second gate pattern in a second region of the semiconductor substrate; forming a first sidewall spacer on a sidewall of the first gate pattern and a second sidewall spacer on a sidewall of the second gate pattern; implanting a first impurity into the first region of the semiconductor substrate using the first gate pattern and the first sidewall spacer as a mask; implanting a second impurity into the second region of the semiconductor substrate using the second gate pattern and the second sidewall spacer as a mask; etching the semiconductor substrate in the second region using the second gate pattern and the second sidewall spacer as a mask to form a trench; forming a semiconductor layer in the trench; after forming the semiconductor layer, depositing a first insulating film over the first region and the second region; etching the first insulating film to form a third sidewall spacer on a side surface of the first sidewall spacer and a fourth sidewall spacer on a side surface of the second sidewall spacer; implanting a third impurity into the first region of the semiconductor substrate using the first gate pattern and the first sidewall spacer and the third sidewall spacer as a mask; implanting a fourth impurity into the second region of the semiconductor substrate using the second gate pattern and the second sidewall spacer and the fourth sidewall spacer as a mask; and after implanting the third impurity and the fourth impurity, removing the third sidewall spacer and the fourth sidewall spacer.