发明名称 |
INTERDIGITATED BACK CONTACT HETEROJUNCTION PHOTOVOLTAIC DEVICE |
摘要 |
A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed. |
申请公布号 |
US2014227825(A1) |
申请公布日期 |
2014.08.14 |
申请号 |
US201313967126 |
申请日期 |
2013.08.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN TZE-CHIANG;HEKMATSHOARTABARI BAHMAN;SADANA DEVENDRA K.;SHAHRJERDI DAVOOD |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a photovoltaic device, comprising:
forming an interdigitated back contact on a crystalline substrate having a first dopant conductivity; and forming a front surface field structure on the substrate by:
forming a crystalline layer on the substrate; andforming an amorphous layer on the crystalline layer, the crystalline layer and the noncrystalline layer being doped with dopants having a same dopant conductivity as the substrate. |
地址 |
Armonk NY US |