发明名称 INTERDIGITATED BACK CONTACT HETEROJUNCTION PHOTOVOLTAIC DEVICE
摘要 A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed.
申请公布号 US2014227825(A1) 申请公布日期 2014.08.14
申请号 US201313967126 申请日期 2013.08.14
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHEN TZE-CHIANG;HEKMATSHOARTABARI BAHMAN;SADANA DEVENDRA K.;SHAHRJERDI DAVOOD
分类号 H01L31/18 主分类号 H01L31/18
代理机构 代理人
主权项 1. A method for forming a photovoltaic device, comprising: forming an interdigitated back contact on a crystalline substrate having a first dopant conductivity; and forming a front surface field structure on the substrate by: forming a crystalline layer on the substrate; andforming an amorphous layer on the crystalline layer, the crystalline layer and the noncrystalline layer being doped with dopants having a same dopant conductivity as the substrate.
地址 Armonk NY US