发明名称 |
LIGHT-EMITTING DEVICE |
摘要 |
A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees. |
申请公布号 |
US2014225138(A1) |
申请公布日期 |
2014.08.14 |
申请号 |
US201414174036 |
申请日期 |
2014.02.06 |
申请人 |
Epistar Corporation |
发明人 |
YANG Tsung-Hsien;HSU Tzu-Chieh;CHEN Yi-Ming;LAI Yi-Tang;YANG Jhih-Jheng;WEI Chih-Wei;CHEN Ching-Sheng;CHEN Shih-I;HSU Chia-Liang;HSU Ye-Ming |
分类号 |
H01L33/22 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
1. A light-emitting device, comprising:
a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees. |
地址 |
Hsinchu TW |