发明名称 DRY ETCHING APPARATUS AND CLAMP THEREFOR
摘要 A dry etching apparatus according to an aspect of the present invention is provided with a stage on which a substrate including a resist mask on an outermost layer thereof is mounted; a clamp for holding down the substrate from above the resist mask to fix the substrate on the stage; a chamber within which the stage and the clamp are housed; an exhaust device which evacuates the chamber; a process gas supply device which supplies a process gas into the chamber; and a power supply for supplying electrical power used to generate plasma within the chamber, wherein the clamp has an annular structure for covering an entire outer circumference and side surface of the substrate, and an antiadhesion layer composed of an inorganic film for preventing an adhesion of a resist material is formed on the contact surface side of the clamp in contact with the substrate.
申请公布号 US2014224427(A1) 申请公布日期 2014.08.14
申请号 US201414181279 申请日期 2014.02.14
申请人 FUJIFILM CORPORATION 发明人 TAKAHASHI Shuji
分类号 H01L21/687;H01J37/20 主分类号 H01L21/687
代理机构 代理人
主权项 1. A dry etching apparatus comprising: a stage on which a substrate including a resist mask on an outermost layer thereof is mounted; a clamp for holding down the substrate from above the resist mask to fix the substrate on the stage; a chamber within which the stage and the clamp are housed; an exhaust device which evacuates the chamber; a process gas supply device which supplies a process gas into the chamber; and a power supply for supplying electrical power used to generate plasma within the chamber, wherein the clamp has an annular structure for covering an entire outer circumference and side surface of the substrate, and an antiadhesion layer composed of an inorganic film for preventing an adhesion of a resist material is formed on a contact surface side of the clamp in contact with the substrate.
地址 Tokyo JP