| 摘要 |
[Problem] To provide a technique whereby a GaN substrate, which consists of GaN crystals having a substantially uniform transfer density distribution, can be easily manufactured at a low cost and high yield without any complicated steps. [Solution] A method for manufacturing a GaN substrate, said method comprising: irradiating the inside of a single-crystal substrate with laser light to form amorphous parts within the single-crystal substrate; and then forming GaN crystals on one surface of the single-crystal substrate to give the GaN substrate. The transfer density distribution on the entire surface of the GaN substrate thus manufactured is substantially uniform. The amorphous parts are formed in multiple linear patterns relative to the planar direction of the single-crystal substrate. When the pitches among individual patterns are 0.5 mm, the volume ratio of the total volume of the amorphous parts to the volume of the single-crystal substrate is 0.10% or 0.20%. When the pitches among individual patterns are 1.0 mm, the volume ratio of the total volume of the amorphous parts to the volume of the single-crystal substrate is 0.05% or 0.10%. |
