| 摘要 |
<p>Provided is a twin plug forming process in which a contact hole that is between word lines (10b, 10c) and is enclosed by a bit line (16) is filled with a second conducting material and separated in the second direction, wherein without forming a conventional dummy word line, a diffusion layer separation trench (29) is formed by further etching the surface of a semiconductor substrate exposed between twin plugs, and the trench is filled with a diffusion layer separation insulating film (30) to separate a diffusion layer, and separate contact plugs (25b, 25c).</p> |
