| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element and a manufacturing method of the same, which can increase luminous efficiency and suppress increase in droop ratio.SOLUTION: A semiconductor light-emitting element manufacturing method comprises: sequentially forming a first multiquantum well structure layer 15 in which well layers 15a and barrier layers 15b are alternately and repeatedly laminated one by one, a second multiquantum well structure layer 16 and a multiquantum well luminescent layer 17 by lamination on a GaN-based semiconductor layer. At this time, an In composition of a well layer 16a included in the second multiquantum well structure layer is larger than an In composition of a well layer 17a included in the luminescent layer, and an In composition of a well layer 15a included in the first multiquantum well structure layer is equal to or smaller than an In composition of the well layer included in the luminescent layer. |
