发明名称 SPUTTER FILM DEPOSITION APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To provide a sputter film deposition apparatus which uses dielectric material as a target and can form a thin film having uniform thickness over a substrate at high speed.SOLUTION: A sputter film deposition apparatus 1 includes: a dielectric part 30 as a target; a rectangular wave guide 51 which has a slot antenna 510 with a slot 511 formed, through which the microwave passes; a microwave plasma generation mechanism 5 which generates plasma on a surface 300 of the dielectric part 30 by the microwave passing through the slot 511 which is covered with the dielectric part 30; a high frequency plasma generation mechanism 4 which is disposed on a rear surface at the back of the surface 300 of the dielectric part 30, and generates plasma with a high frequency wave; and a substrate 20 disposed opposite to the surface 300 of the dielectric part 30. The sputter film deposition apparatus 1 forms a thin film on a surface of the substrate 20 by depositing sputter particles emitted from the dielectric part 30.</p>
申请公布号 JP2014145118(A) 申请公布日期 2014.08.14
申请号 JP20130015453 申请日期 2013.01.30
申请人 TOKAI RUBBER IND LTD;NAGOYA UNIV 发明人 SASAI TATENORI ; TOYODA HIROTAKA
分类号 C23C14/34;C23C14/40 主分类号 C23C14/34
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