| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is highly reliable and can be inexpensively provided, and a method of manufacturing the semiconductor device.SOLUTION: An SiC semiconductor device 10 comprises an insulating substrate 1, a semiconductor chip 6, a printed circuit board 9, and external electrode terminals 11 and 12. The rear surface of the semiconductor chip 6 is bonded to a first copper block 3 on the front surface side of the insulating substrate 1. A front surface electrode of the semiconductor chip 6 is bonded to an implant pin 8 of the printed circuit board 9 disposed on the front surface side of the semiconductor chip 6. A first sealing body 21 is filled between the insulating substrate 1 and the printed circuit board 9, and the semiconductor chip 6 and the implant pin 8 are sealed with the first sealing body 21. The whole front surface side of the insulating substrate 1 is sealed with a second sealing body 22. The second sealing body 22 covers the first sealing body 21, the insulating substrate 1, and the printed circuit board 9. The outer periphery of the second sealing body 22 is covered with a third sealing body 23 for preventing the second sealing body 22 from being oxidized. |
