| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method excellent in controllability of a p-type nitride semiconductor crystal by using metal organic chemical vapor deposition.SOLUTION: In a manufacturing method of a nitride semiconductor crystal, an organic metallic compound of a group III element, a hydride of nitrogen, and an organic compound having a partial structure of C-O-C are used as material, and C atoms and O atoms are simultaneously trapped into crystals by metal organic chemical vapor deposition to obtain p-type conductivity. |
