SEMICONDUCTOR DEVICE AND FABRICATING METHOD OF THE SAME

摘要

Openings are formed by lithography and subsequent dry etching at the portions of a first protective film which correspond to connecting holes of second plugs which will be described later, namely at the portions thereof which align with first plugs, wherein the openings have a diameter greater than that of connecting holes by about 0.4 μm.

主权项

1. A fabricating method of a semiconductor device comprising the steps of:
forming a first insulating film comprising at least a first interlayer insulating film on a semiconductor substrate; forming a first connecting hole in said first insulating film and forming a first plug comprising a conductive material which fills said first connecting hole; forming a capacitor construction comprising a lower electrode, an upper electrode and a dielectric film interposed therebetween; forming a second insulating film comprising at least a laminated-layer construction consisting of a first protective film and a second protective film for preventing degradations of the characteristics of said capacitor construction, said first protective film and said second protective film being laminated with a second interlayer insulating film interposed therebetween and said second insulating film covering said capacitor construction; and forming a second connecting hole in said second insulating film such that said first plug is exposed at least at a portion thereof and forming a second plug comprising a conductive material which fills said second connecting hole; wherein after forming said first protective film and prior to forming said second interlayer insulating film, said first protective film is processed such that said first protective film is removed at least at the portion which corresponds to said second connecting hole and said first protective film is left to cover said capacitor construction.