FILM-FORMING MATERIAL, GROUP IV METAL OXIDE FILM AND VINYLENEDIAMIDE COMPLEX

摘要

An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

主权项

1. A film-forming material, obtained by a process comprising:
reacting a vinylenediamide complex represented by formula (1) with one or more oxidizing agents selected from the group consisting of oxygen gas, air, ozone, water and hydrogen peroxide: wherein: M1 represents a titanium atom, a silicon atom, a zirconium atom or a hafnium atom; each of R1 and R4 independently represents an alkyl group having a carbon number of 3 to 12; each of R2 and R3 independently represents a hydrogen atom or an alkyl group having a carbon number of 1 to 4; and R5 represents an alkyl group having a carbon number of 1 to 12, which is optionally substituted with a fluorine atom.