LAMINATED FILM AND ELECTRONIC DEVICE

摘要

Provided is a laminated film comprising a substrate, and at least one layer of film layer that is formed on at least one surface of the substrate, wherein at least one layer of the film layer contains silicon, oxygen, and hydrogen, a ratio of a total value of Q1, Q2, and Q3 peak areas to a Q4 peak area on the basis of an abundance ratio of silicon atoms having different bonding states to oxygen atoms, which are obtained by 29Si solid-state NMR measurement of the film layer, satisfies the following conditional expression (I):;(total value of Q1, Q2, and Q3 peak areas)/(Q4 peak area)<1.0  (I)wherein Q1 represents a silicon atom that is bonded to one neutral oxygen atom and three hydroxyl groups, Q2 represents a silicon atom that is bonded to two neutral oxygen atoms and two hydroxyl groups, Q3 represents a silicon atom that is bonded to three neutral oxygen atoms and one hydroxyl group, and Q4 represents a silicon atom that is bonded to four neutral oxygen atoms.

主权项

1. A laminated film, comprising:
a substrate; and at least one layer of film layer that is formed on at least one surface of the substrate, wherein at least one layer of the film layer contains silicon, oxygen, and hydrogen, a ratio of a total value of Q1, Q2, and Q3 peak areas to a Q4 peak area on the basis of an abundance ratio of silicon atoms having different bonding states to oxygen atoms, which are obtained by 29Si solid-state NMR measurement of the film layer, satisfies the following conditional expression (I):
(total value of Q1, Q2, and Q3 peak areas)/(Q4 peak area)<1.0  (I), wherein Q1 represents a silicon atom that is bonded to one neutral oxygen atom and three hydroxyl groups, Q2 represents a silicon atom that is bonded to two neutral oxygen atoms and two hydroxyl groups, Q3 represents a silicon atom that is bonded to three neutral oxygen atoms and one hydroxyl group, and Q4 represents a silicon atom that is bonded to four neutral oxygen atoms.