| 摘要 |
In the present invention, a method for manufacturing a semiconductor device comprises a step A, a step B, a step C, and a step D. In step A, a laminate having a metal layer, a thermosetting insulating resin layer, a lead frame and a semiconductor chip laminated in the stated order is prepared. In step B, a thermoset resin sheet is arranged on a surface on which the semiconductor chip of the laminate appears. In step C, the semiconductor chip is implanted at least in the thermosetting resin sheet. In step D, the insulating resin layer and the thermosetting resin sheet are thermally cured. |
