| 摘要 |
A non-volatile memory device includes a memory cell array having memory cells distributed among a plurality of sectors and a controller operable to program, read, and erase memory cells in said memory array, the controller further operable to generate and store EPLI values for programming a number of EPLI bits in one of the plurality of sectors with the stored EPLI values. The memory device additionally include a comparator to compare the stored EPLI values with EPLI values programmed in the EPLI bits. |
