METHOD FOR ITO THIN FILM SPUTTERING PROCESS AND ITO THIN FILM SPUTTERING DEVICE

摘要

Provided is a ITO thin film sputtering process, comprising the following steps: S1, before charging a process gas into a reaction chamber, turning on a direct-current sputtering power source to apply a sputtering power to a target, and setting the output voltage of the direct-current sputtering power source to be a pre-set voltage value; S2, after a pre-set time, charging the process gas into the reaction chamber to accomplish glow-starting; and S3, applying a sputtering power to the target via the direct-current sputtering power source to perform the sputtering process. Also provided is an ITO thin film sputtering device applying the above-mentioned process steps to sputter an ITO thin film.