发明名称 |
THREE DIMENSIONAL NAND DEVICE WITH SEMICONDUCTOR, METAL OR SILICIDE FLOATING GATES AND METHOD OF MAKING THEREOF |
摘要 |
A method of making a monolithic three dimensional NAND string includes forming a stack of alternating layers of a first material and a second material, etching the stack to form a front side opening in the stack, selectively forming a plurality of discrete semiconductor, metal or silicide charge storage regions on portions of the second material layers exposed in the front side opening, forming a tunnel dielectric layer and semiconductor channel layer in the front side opening, etching the stack to form a back side opening in the stack, removing at least a portion of the second material layers through the back side opening to form back side recesses between the first material layers, forming a blocking dielectric in the back side recesses through the back side opening, and forming control gates over the blocking dielectric in the back side recesses through the back side opening. |
申请公布号 |
WO2014123705(A1) |
申请公布日期 |
2014.08.14 |
申请号 |
WO2014US13117 |
申请日期 |
2014.01.27 |
申请人 |
SANDISK TECHNOLOGIES, INC. |
发明人 |
MAKALA, RAGHUVEER, S.;ALSMEIER, JOHANN |
分类号 |
H01L29/788;H01L27/115;H01L29/66 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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