| 摘要 |
Disclosed is a method for manufacturing a thin film transistor and pixel units thereof. When manufacturing the thin film transistor, a portion of an etch barrier layer (5), a gate metal layer (4) and a gate insulating layer (3) on a substrate (1) are etched by the same mask (6). A metal oxide layer (2), the gate insulating layer (3), the gate metal layer (4) and the etch barrier layer (5) in a gate region and the metal oxide layer (2), the gate insulating layer (3) and the gate metal layer (4) in a source region and a drain region for forming a contact via portion are retained, thereby the positions of a gate (11), a source/drain (12, 13) and the contact via of the source/drain (9, 10) are determined in one time, and the space between the source contact via (9) formed by replacing material sequentially and the gate (11) is equal to the space between the drain contact via (10) formed by replacing material sequentially and the gate (11), thereby the source/drain (12, 13) are self-aligned with the gate (11) and the contact via of the source/drain (9, 10) are self-aligned with the gate (11) and are symmetrical, thus the formed thin film transistor hardly generates short circuits and open circuits and has small parasitic capacitance, the circuit prepared has fast running speed. Further, the process is suitable for manufacturing pixel units of the thin film transistor. |
