COPPER PILLAR FULL METAL VIA ELECTRICAL CIRCUIT STRUCTURE

摘要

An electrical interconnect including a first circuitry layer with a first surface and a second surface. A first liquid dielectric layer is imaged directly on the first surface of the first circuitry layer to form a first dielectric layer with a plurality of first recesses. Conductive plating substantially fills a plurality of the first recesses to create a plurality of first solid copper conductive pillars electrically coupled to, and extending generally perpendicular to, the first circuitry layer. A second liquid dielectric layer is imaged directly on the first dielectric layer to form a second dielectric layer with a plurality of second recesses. Conductive plating substantially fills a plurality of the second recesses to form a plurality of second solid copper conductive pillars electrically coupled to, and extending parallel with, the first conductive pillars. An IC device is electrically coupled to a plurality of the second conductive pillars.

主权项

1. An electrical interconnect comprising:
a first circuitry layer comprising a first surface and a second surface; a first liquid dielectric layer imaged directly on the first surface of the first circuitry layer to form a first dielectric layer with a plurality of first recesses; a conductive plating that substantially fills a plurality of the first recesses comprising a plurality of first solid copper conductive pillars electrically coupled to, and extending generally perpendicular to, the first circuitry layer; a second liquid dielectric layer imaged directly on the first dielectric layer to form a second dielectric layer with a plurality of second recesses; a conductive plating that substantially fills a plurality of the second recesses comprising a plurality of second solid copper conductive pillars electrically coupled to, and extending parallel with, the first conductive pillars; and an IC device electrically coupled to a plurality of the second conductive pillars.