POWER SEMICONDUCTOR CHIP WITH A METALLIC MOULDED BODY FOR CONTACTING THICK WIRES OR STRIPS AND METHOD FOR THE PRODUCTION THEREOF

摘要

The invention relates to a power semiconductor chip (10) having at least one upper-sided potential surface and contacting thick wires (50) or strips, comprising a connecting layer (I) on the potential surfaces, and at least one metal moulded body (24, 25) on the connecting layer(s), the lower flat side thereof facing the potential surface being provided with a coating to be applied to the connecting layer (I) according to a connection method, and the material composition thereof and the thickness of the related thick wires (50) or strips arranged on the upper side of the moulded body used according to the method for contacting are selected corresponding to the magnitude.

主权项

1. A power semiconductor chip with at least one upper side potential face and connecting thick wires or strips, comprising:
a bonding layer on the potential faces, and at least one metallic moulded body on the bonding layer(s), the lower flat side of said body facing the potential face being coated appropriately for the bonding process of the bonding layer, and the material composition and thickness of said body being chosen in accordance with the dimensions of the thick wires or strips used in the connecting process on the upper side of the moulded body.