| 摘要 |
PROBLEM TO BE SOLVED: To apply bias voltages different each other on a plurality of monolithically-formed photodiodes.SOLUTION: A p-type region 110 is formed in an electron traveling layer 106 in the region of an opening 109 by selectively performing ion implantation using a mask pattern 108 as a mask. For example, the p-type region 110 may be formed by using a well-known ion implantation system and implanting Be ions with a desired dosage amount. At this time, the ion implantation is performed by setting various conditions such as an accelerating voltage so that the p-type region 110 is formed on the n-type contact layer 107 side of the electron traveling layer 106. |
