| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an illumination system for illuminating a mask in a microlithography projection exposure apparatus, especially, a system including an array of reflection elements that can be achieved as a micro electromechanical system (MEMS).SOLUTION: An illumination system for illuminating a mask 16 in a scanning microlithography projection exposure apparatus has an objective system 52 including an object plane 50, at least one pupil plane 60, and an image plane 54 on which the mask 16 can be arranged. A beam deflection array 40 of reflection or transmission beam deflection elements Mis provided, and each beam deflection element Mdeflects an incident light beam by a variable deflection angle in response to a control signal. The beam deflection element Mis arranged on the object plane 50 of the objective system 52 or in close vicinity thereof.</p> |
