发明名称 |
Method for Manufacturing Small-Size Fin-Shaped Structure |
摘要 |
A method for manufacturing a small-size fin-shaped structure, comprising: forming a first mask layer and a second mask layer on a substrate in sequence; etching the first mask layer and the second mask layer to form a hard mask pattern, wherein a second mask layer pattern is wider than a first mask layer pattern; eliminating the second mask layer pattern; and performing a dry etching of the substrate by taking the first mask layer pattern as a mask, so as to form a fin-shaped structure. According to the method for manufacturing a small-size fin-shaped structure of the present invention, firstly a large-size hard mask is prepared, then a width controllable small-size hard mask is prepared through a wet corrosion, and finally the bulk silicon wafer is etched, so as to obtain the required small-size fin-shaped structure, thereby improving the electrical properties and the integration level of the device, simplifying the processes and reducing the cost. |
申请公布号 |
US2014227878(A1) |
申请公布日期 |
2014.08.14 |
申请号 |
US201214342421 |
申请日期 |
2012.03.05 |
申请人 |
Yang Tao;Zhao Chao;Li Junfeng;Lu Yihong |
发明人 |
Yang Tao;Zhao Chao;Li Junfeng;Lu Yihong |
分类号 |
H01L21/308 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a small-size fin-shaped structure, comprising:
forming a first mask layer and a second mask layer on a substrate in sequence; etching the first mask layer and the second mask layer to form a hard mask pattern, wherein a second mask layer pattern is wider than a first mask layer pattern; eliminating the second mask layer pattern; and performing a dry etching of the substrate by taking the first mask layer pattern as a mask, so as to form a fin-shaped structure. |
地址 |
Beijing CN |