TENSILE POLYCRYSTALLINE SILICON FILM HAVING STABLE RESISTIVITY AND METHOD OF FABRICATING THEREOF

摘要

Tensile polycrystalline silicon films having improved resistivity and less variability or more stable resistivity in finished semiconductors are provided. The methods of manufacturing such polycrystalline silicon films include application of protective film or film layer prior to annealing the semiconductor. Such devices and methods lead to improved stress control and resistivity.

主权项

1. A method of fabricating a semiconductor comprising:
forming a dielectric layer on a substrate; depositing a polysilicon layer on the dielectric layer at a deposition temperature; applying a film to the semiconductor; and annealing the semiconductor.