PHOTOELECTRIC CONVERSION DEVICE

摘要

A photoelectric conversion device includes: a wavelength converting region that absorbs ambient light to generate electrons and holes, and recombines the generated electrons and holes to generate monochromatic light; and a photoelectric conversion region that has a p-n junction or p-i-n junction, absorbs the monochromatic light generated in the wavelength converting region to generate electrons and holes, and separates and moves the electrons and holes generated by absorption of the monochromatic light. The wavelength converting region includes: a carrier generating region that generates the electrons and holes; a light emitting region that generates the monochromatic light; and a carrier selective transfer region that is disposed between the carrier generating region and the light emitting region and that, of the electrons and holes generated in the carrier generating region, moves those electrons and holes having specific energies difference there between to the light emitting region.

主权项

1. A photoelectric conversion device comprising:
a wavelength converting region that absorbs ambient light to generate electrons and holes, and recombines the generated electrons and holes to generate monochromatic light; and a photoelectric conversion region that has a p-n junction or p-i-n junction, absorbs the monochromatic light generated in the wavelength converting region to generate electrons and holes, and separates and moves the electrons and holes generated by absorption of the monochromatic light, wherein the wavelength converting region includes:
a carrier generating region that generates the electrons and holes;a light emitting region that generates the monochromatic light; anda carrier selective transfer region that is disposed between the carrier generating region and the light emitting region and that moves, of the electrons and holes generated in the carrier generating region, an electron and a hole having a specific energy difference therebetween to the light emitting region, and wherein assuming that Eg1 is an energy gap for a material making up the carrier generating region, Eg2 is an energy gap for a material making up the light emitting region; and Eg3 is an energy gap for a material making up the carrier selective transfer region in a shape in which the material is incorporated within the wavelength converting region, a following relation is satisfied:
Eg1