发明名称 |
N-TYPE DIFFUSION LAYER FORMATION COMPOSITION, MANUFACTURING METHOD OF N-TYPE DIFFUSION LAYER, AND MANUFACTURING METHOD OF SOLAR CELL ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide an n-type diffusion layer formation composition capable of efficiently forming an n-type diffusion layer on a specific part without forming an unnecessary n-type diffusion layer in a manufacturing step of a solar cell element using a silicon substrate, a manufacturing method of the n-type diffusion layer, and a manufacturing method of the solar cell element.SOLUTION: The n-type diffusion layer formation composition contains: a glass powder containing a donor chemical element and having a softening temperature of 300°C to 950°C; and a dispersion medium. By coating the n-type diffusion layer formation composition and performing a thermal diffusion treatment, an n-type diffusion layer and a solar cell element having the same are manufactured. |
申请公布号 |
JP2014146811(A) |
申请公布日期 |
2014.08.14 |
申请号 |
JP20140040996 |
申请日期 |
2014.03.03 |
申请人 |
HITACHI CHEMICAL CO LTD |
发明人 |
NOJIRI TAKESHI;YOSHIDA MASATO;OKANIWA KAORU;MACHII YOICHI;IWAMURO MITSUNORI;ADACHI SHUICHIRO;SATO TETSUYA;KIZAWA KEIKO |
分类号 |
H01L21/225;C03C3/097;C03C3/16;C03C8/16;C23C24/08;H01L31/068 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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