发明名称 N-TYPE DIFFUSION LAYER FORMATION COMPOSITION, MANUFACTURING METHOD OF N-TYPE DIFFUSION LAYER, AND MANUFACTURING METHOD OF SOLAR CELL ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide an n-type diffusion layer formation composition capable of efficiently forming an n-type diffusion layer on a specific part without forming an unnecessary n-type diffusion layer in a manufacturing step of a solar cell element using a silicon substrate, a manufacturing method of the n-type diffusion layer, and a manufacturing method of the solar cell element.SOLUTION: The n-type diffusion layer formation composition contains: a glass powder containing a donor chemical element and having a softening temperature of 300°C to 950°C; and a dispersion medium. By coating the n-type diffusion layer formation composition and performing a thermal diffusion treatment, an n-type diffusion layer and a solar cell element having the same are manufactured.
申请公布号 JP2014146811(A) 申请公布日期 2014.08.14
申请号 JP20140040996 申请日期 2014.03.03
申请人 HITACHI CHEMICAL CO LTD 发明人 NOJIRI TAKESHI;YOSHIDA MASATO;OKANIWA KAORU;MACHII YOICHI;IWAMURO MITSUNORI;ADACHI SHUICHIRO;SATO TETSUYA;KIZAWA KEIKO
分类号 H01L21/225;C03C3/097;C03C3/16;C03C8/16;C23C24/08;H01L31/068 主分类号 H01L21/225
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