| 发明名称 |
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE |
| 摘要 |
A method for fabricating a semiconductor device includes forming a pre-isolation layer covering a fin formed on a substrate, the pre-isolation layer including a lower pre-isolation layer making contact with the fin and an upper pre-isolation layer not making contact with the fin, removing a portion of the upper pre-isolation layer by performing a first polishing process, and planarizing the pre-isolation layer such that an upper surface of the fin and an upper surface of the pre-isolation layer are coplanar by performing a second polishing process for removing the remaining portion of the upper pre-isolation layer. |
| 申请公布号 |
US2014227847(A1) |
申请公布日期 |
2014.08.14 |
| 申请号 |
US201313801341 |
申请日期 |
2013.03.13 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON IL-YOUNG;HWANG CHANG-SUN;KANG BO-KYEONG;KIM JAE-SEOK;KIM HO-YOUNG;YOON BO-UN |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a semiconductor device, the method comprising:
forming a pre-isolation layer covering a fin formed on a substrate, the pre-isolation layer including a lower pre-isolation layer making contact with the fin and an upper pre-isolation layer not making contact with the fin; removing a portion of the upper pre-isolation layer by performing a first polishing process; and planarizing the pre-isolation layer such that an upper surface of the fin and an upper surface of the pre-isolation layer are coplanar by performing a second polishing process for removing a remaining portion of the upper pre-isolation layer. |
| 地址 |
Suwon-si KR |
