发明名称 DUAL SUBSTRATE, POWER DISTRIBUTION AND THERMAL SOLUTION FOR DIRECT STACKED INTEGRATED DEVICES
摘要 Some implementations provide an integrated device that includes a first substrate, a first die coupled to the first substrate, a second die coupled to the first die, and a second substrate coupled to the second die. The second substrate is configured to provide an electrical path for a signal to the second die. The integrated device further includes a molding surrounding the first die and the second die, and several through mold vias (TMVs) coupled to the second substrate. The TMVs are configured to provide an electrical path for the signal to the second die through the second substrate. In some implementations, the second substrate includes a signal distribution structure configured to provide the electrical path for the signal to the second die. In some implementations, the first substrate and the second substrate are part of a signal distribution network that provides signal to the second die.
申请公布号 US2014225246(A1) 申请公布日期 2014.08.14
申请号 US201314133451 申请日期 2013.12.18
申请人 QUALCOMM INCORPORATED 发明人 Henderson Brian Matthew;Lisk Durodami Joscelyn;Gu Shiqun;Radojcic Ratibor;Nowak Matthew Michael
分类号 H01L23/538;H01L23/36 主分类号 H01L23/538
代理机构 代理人
主权项 1. An integrated device comprising: a first substrate; a first die coupled to the first substrate; a second die coupled to the first die; and a second substrate coupled to the second die, the second substrate configured to provide an electrical path for a signal to the second die.
地址 San Diego CA US