METAL-INSULATOR-METAL CAPACITOR OVER CONDUCTIVE LAYER

摘要

A method of fabricating a metal-insulator-metal (MIM) capacitor reduces the number of masks and processing steps compared to conventional techniques. A conductive redistribution layer (RDL) is patterned on a semiconductor chip. A MIM dielectric layer is deposited over the RDL. A first conductive layer of a MIM capacitor is deposited over the MIM dielectric layer. The MIM dielectric layer is patterned using a MIM conductive layer mask. The conductive redistribution layer includes two RDL nodes that extend under the first conductive layer of the MIM capacitor. A conductive via or bump extends through the MIM dielectric layer and couples one of the RDL nodes to the first conductive layer of the MIM capacitor.

主权项

1. A method of constructing a metal-insulator-metal (MIM) capacitor, comprising:
patterning a redistribution layer (RDL) on a semiconductor chip into a first RDL node and a second RDL node; depositing a MIM dielectric layer on the RDL, the MIM dielectric layer extending over the first RDL node and the second RDL node; depositing a first MIM capacitor conductive layer on the MIM dielectric layer, the first MIM capacitor conductive layer extending over the first RDL node and the second RDL node; and patterning the first MIM capacitor conducive layer using a single MIM capacitor mask.