ION REDUCED, ION CUT-FORMED THREE-DIMENSIONAL (3D) INTEGRATED CIRCUITS (IC) (3DICS), AND RELATED METHODS AND SYSTEMS

摘要

Ion-reduced, ion cut-formed three-dimensional (3D) integrated circuits (IC) (3DICs) are disclosed. Related methods and systems are also disclosed. During an ion-cut process for forming a monolithic 3DIC, extra ions are implanted in the donor wafer to effectuate the ion-cut. Excess, residual implanted ions remain implanted in a top layer of the transfer layer of the 3DIC. However, these residual implanted ions can interfere with operation of electronic components in the 3DIC. In this regard, the 3DIC and methods disclosed herein involve reduction or removal of the residual extra ions before further electronic components are created and layered in a 3DIC. In this manner, the extra charge elements introduced by such extra ions are reduced or removed providing for better functionality in the completed device.

主权项

1. A three-dimensional (3D) integrated circuit (IC) (3DIC) comprising:
a substrate having a first tier of electronic components thereon; a donor wafer portion having a second tier of electronic components thereon, wherein the donor wafer portion is substantially free of ions introduced to the donor wafer portion during an ion cutting procedure and wherein the donor wafer portion is substantially free of surface deformation and without thermal diffusion of the ions; and an oxide bond joining the substrate to the donor wafer portion.