发明名称 SOLAR CELL USING QUANTUM DOTS AND METHOD OF FABRICATING SAME
摘要 An efficient solar cell and method of fabricating the same is disclosed. The solar cell includes an n-doped substrate layer. A p-doped buffer layer is disposed on the n-doped substrate layer. A quantum dot absorber stack is disposed on the buffer layer. The absorber stack includes at least one quantum dot layer and one p-doped spacer layer. A p-doped cap layer is disposed on the quantum dot absorber layer. The thickness of the quantum dot layer is less than an electron diffusion length from the depletion region formed by the n-doped substrate layer and the p-doped buffer layer. The quantum dot absorber layer allows for additional photo currents from two-photon absorption from the p-doped cap layer being exposed to a light source.
申请公布号 US2014224328(A1) 申请公布日期 2014.08.14
申请号 US201313911935 申请日期 2013.06.06
申请人 AFANASEV ANDREI;KECHIANTZ ARA;LAZZARI JEAN-LOUIS 发明人 AFANASEV ANDREI;KECHIANTZ ARA;LAZZARI JEAN-LOUIS
分类号 H01L31/0352;H01L31/18 主分类号 H01L31/0352
代理机构 代理人
主权项 1. A solar cell comprising: an n-doped substrate layer; a p-doped buffer layer disposed on the n-doped substrate layer; a quantum dot absorber stack disposed on the buffer layer, the quantum dot absorber stack including at least one quantum dot layer having quantum dots and one spacer layer; a p-doped cap layer is disposed on the quantum dot absorber stack, the p-doped cap layer exposed to a light source; and wherein the thickness of the quantum dot absorber stack is within an electron diffusion length from a depletion region formed by the n-doped substrate layer and the p-doped buffer layer.
地址 Leesburg VA US