发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 In the present invention, a first insulating film (61) is formed with a recess portion (62) left therein in a contact hole (54), and the contact hole is surrounded by a first line pattern (52) and a second line pattern (53), the first line pattern and the second line pattern having different heights. The recess portion (62) is filled so as to form a first mask film (63), and the first insulating film (61) except for the recess portion (62) is etched back so as to be removed, thereby forming a second contact hole (64). After that, a conductive material is implanted in the second contact hole (64), and the top surface of the first line pattern (52) having a low height is exposed, thereby forming a contact plug.
申请公布号 WO2014123177(A1) 申请公布日期 2014.08.14
申请号 WO2014JP52724 申请日期 2014.02.06
申请人 PS4 LUXCO S.A.R.L.;YOKOMICHI, MASAHIRO 发明人 YOKOMICHI, MASAHIRO
分类号 H01L21/28;H01L21/768;H01L21/8242;H01L27/108 主分类号 H01L21/28
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