发明名称 SUBSTRATE PROCESSING DEVICE AND CONTROL METHOD FOR THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide an efficient recipe for processing substrates such as wafers in accordance with an opening/closing state of a gate valve which is provided between a substrate processing chamber and a substrate transfer chamber.SOLUTION: The substrate processing device has a control section including a storage section which at least stores a predetermined processing procedure which consists of a plurality of steps for processing substrates in the substrate processing chamber, contents of a gate valve check target table (T1) which sets check targets among control items including gas flow rate, processing chamber temperature, and processing chamber pressure when a gate valve is opened, in each step of the processing procedure, and contents of a determination flag table (T2) in which a flag of the control items is set. In the substrate processing device, the control section checks the flag state set in the determination flag table (T2) for the control items set in the gate valve check target table (T1), and performs processing procedure (S309) with the gate valve opened when each of the control items can be performed.</p>
申请公布号 JP2014146651(A) 申请公布日期 2014.08.14
申请号 JP20130013219 申请日期 2013.01.28
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SAITO KAZUTO
分类号 H01L21/31;H01L21/02 主分类号 H01L21/31
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