| 摘要 |
An electrostatic discharge protection device has a substrate, a P-well, a N-well, and an isolation portion. The P-well and N-well formed in the substrate are neighboring to each other. Along a specific direction, the P-well has a first N-type, a first P-type, a second N-type, a second P-type, and a third N-type high doping regions sequentially located thereon, and the N-well has a third P-type, a fourth N-type, a fourth P-type, a fifth N-type, and a fifth P-type high doping regions sequentially located thereon. The first N-type, the third N-type, the first P-type, and the second P-type high doping regions are coupled to a ground end, the third P-type, the fifth P-type, the fourth N-type, and the fifth N-type high doping regions are coupled to a voltage supply end, and the second N-type and the fourth P type high doping regions are coupled to an input/output end. |
| 主权项 |
1. An electrostatic discharge protection device, comprising:
a substrate; a first P-well, formed in the substrate, wherein along a specific direction, the P-well has a first N-type high doping region, a first P-type high doping region, a second N-type high doping region, a second P-type high doping region, and a third N-type high doping regions sequentially located thereon, and the first, third N-type high doping regions and the first, second P-type doping regions are connected to a first ground end; and a first N-well, formed in the substrate, neighboring to the first P-well, wherein along the specific direction, the N-well has a third P-type high doping region, a fourth N-type high doping region, a fourth P-type high doping region, a fifth N-type high doping region, and a fifth P-type high doping regions sequentially located thereon, and the third, fifth P-type high doping regions and the fourth, fifth N-type high doping regions are coupled to a first voltage supply end, and the second N-type high doping region, the fourth P-type high doping region are coupled to the first input/output end. |
