SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

Disclosed are a semiconductor device and manufacturing method thereof, an exemplary device comprising: a substrate; a back gate formed on the substrate; fins formed on the two sides of the back gate; and a dielectric layer sandwiched between the back gate and each fin; the end portions on the two opposite sides of the back gate are recessed relative to the middle portion between the end portions, so that the overlap area between the end portion and each fin is less than the overlap area between the middle portion and the fin.