| 摘要 |
<p>A semiconductor device and manufacturing method thereof, an exemplary device comprising: a substrate (100); a back gate (120) formed on the substrate; fins (104) formed by a part of the semiconductor in the substrate (100) on the two opposite sides of the back gate (120); and a back gate dielectric layer (116) sandwiched between the back gate (120) and each fin (104). On one hand, the back gate (120) can effectively control the threshold voltage of the device; on the other hand, the back gate (120) can act as the support structure of the fin (104), thus facilitating the improvement of structural reliability.</p> |
