发明名称 SEMICONDUCTOR PROCESSING SYSTEMS HAVING MULTIPLE PLASMA CONFIGURATIONS
摘要 <p>An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.</p>
申请公布号 WO2014123708(A1) 申请公布日期 2014.08.14
申请号 WO2014US13138 申请日期 2014.01.27
申请人 APPLIED MATERIALS, INC. 发明人 LUBOMIRSKY, DMITRY;CHEN, XINGLONG;VENKATARAMAN, SHANKAR
分类号 H01L21/3065 主分类号 H01L21/3065
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