| 摘要 |
670,730. Light-sensitive cells. WESTERN ELECTRIC CO., Inc. June 10, 1949 [April 6, 1949], No. 15511/49. Class 40 (iii). A photo-electric cell comprises a body of semi-conductive material having a thin portion between opposite faces, a rectifying contact to one face of the thin portion, an ohmic connection at a region spaced from the rectifying connection and means for directing a ray of light against the region of the other face of thin portion opposite to the rectifying contact. In Fig. 5, a square germanium wafer 10 is attached by solder to a conductive support 20 within a cylindrical casing 22 and has a recess 11 in which is centred a phosphor-bronze collector contact 12 connected with conductor 25. Lens 16 focuses light on the central region of face 18 opposite the contacts The wafer has an overall thickness of 0.02 inch and a minimum thickness of 0.002 inch at the point of contact. A circuit including a load resistance and a biasing potential is provided between the connections with the wafer. Figs. 2, 3, 4 and 7 (not shown), illustrate the operating characteristics, resolution and spectral response of a typical cell employing a germanium wafer. N-type and P-type germanium and silicon are referred to as suitable semiconductive materials. The ohmic connection to the wafer may be effected by a rhodium coating electroplated on the surface or by cured silver paste. The light resolving power of such cells is high and a plurality of spaced collectors may be employed with the light beam directed against the active regions of the wafer face opposite the respective collectors in any desired sequence to effect a switching action. Specifications 632,942, 632,980 and 700,232, [both in Group XL (c)], are referred to. |
