发明名称
摘要 Disclosed is a steam pressure rapid heating device that can lower the crystallization temperature of an oxide film. Said steam pressure rapid heating device is provided with: a mounting platform (36) that is disposed inside a treatment chamber (34) and on which a substrate (35) is mounted; a heating mechanism (38) that heats the substrate mounted on the mounting platform; a pressurization mechanism (43) that pressurizes the inside of the treatment chamber; a steam-supply mechanism that supplies heated and pressurized steam into the treatment chamber; an evacuation mechanism (56) that evacuates the inside of the treatment chamber; and an oxygen gas supply mechanism that supplies heated and pressurized oxygen gas into the treatment chamber.
申请公布号 JP5568913(B2) 申请公布日期 2014.08.13
申请号 JP20090173272 申请日期 2009.07.24
申请人 发明人
分类号 H01L21/314;C04B35/491;H01L21/31;H01L21/316;H01L21/8246;H01L27/105;H01L41/09;H01L41/18;H01L41/22;H01L41/39;H01L41/43 主分类号 H01L21/314
代理机构 代理人
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