SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

The present invention relates to a semiconductor light emitting device that includes a first conductive semiconductor base layer formed on a substrate; an insulation film which is formed on the first conductive semiconductor base layer and has a plurality of openings through which the first conductive semiconductor base layer is exposed; and a plurality of light emitting nanostructures which include a first conductive semiconductor core formed on an area where the first conductive semiconductor base layer is exposed, an active layer and a second conductive semiconductor layer which are formed on the surface of the first conductive semiconductor core in order. A lower corner of a side of the light emitting nanostructure is located at a side wall of the opening of the insulation film.