| 摘要 |
According to one embodiment, a semiconductor light emitting device (110, 120) includes a metal layer (60), a stacked structural body (90), a first electrode (40), a pad electrode (44), a first conductive layer (41), a second conductive layer (42) and an insulating layer (80). The metal layer (60) includes a major surface (60mf) having a first region (60a), a second region (60b), a third region (60c) and a fourth region (60d). The stacked structural body (90) includes a first semiconductor layer (10), a second semiconductor layer (20) and a light emitting layer (30). The first semiconductor layer (10) includes a first portion (11) and a second portion (12). The second semiconductor layer (20) is provided between the first region (60a) and the first portion (11). The first electrode (40) is provided between the second region (60b) and the second portion (12). The pad electrode (44) is provided on the third region (60c). The first conductive layer (41) is provided between the second region (60b) and the first electrode (40) and between the third region (60c) and the pad electrode (44). |
