| 发明名称 |
Organosilane compounds for modifying etch properties of silicon oxide and silicon nitride films |
| 摘要 |
<p>The present invention discloses a process for depositing a carbon containing silicon oxide film, or a carbon containing silicon nitride film having enhanced etch resistance. The process comprises using a silicon containing precursor, a carbon containing precursor and a chemical modifier. The present invention also discloses a process for depositing a silicon oxide film, or silicon nitride film having enhanced etch resistance comprising using an organosilane precursor and a chemical modifier.
</p> |
| 申请公布号 |
EP1928015(A3) |
申请公布日期 |
2014.08.13 |
| 申请号 |
EP20070121751 |
申请日期 |
2007.11.28 |
| 申请人 |
AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
XIAO, MANCHAO;THRIDANDAM, HAREESH;KARWACKI, JR. EUGENE JOSEPH;LEI, XINJIAN |
| 分类号 |
H01L21/316;H01L21/312;H01L21/318 |
主分类号 |
H01L21/316 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
