SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A method for fabricating a semiconductor device is provided. The method for fabricating a semiconductor device includes providing a fin which protrudes from a substrate and a plurality of dummy gate patterns formed on the fin in order to intersect with the fin; forming a first recess in the fin on both sides of the dummy gate patterns; forming an oxide layer on the surface of the first recess; and forming a second recess by removing the oxide layer.