NON-POLAR NITRIDE-BASED LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

The present invention relates to a light emitting device, and particularly, to a nonpolar nitride-based light emitting device and a manufacturing method thereof. The present invention comprises a first semiconductor layer with a first conductivity including an a-plane or m-plane nitride-based semiconductor; a second semiconductor layer positioned on the first semiconductor layer and including a non-doped nitride-based semiconductor; an active layer positioned on the second semiconductor layer and having a nitride-based semiconductor with a first thickness including indium to emit a ray in a first light emitting wavelength, wherein the first thickness is thicker than a c-plane nitride-based semiconductor for emitting the first light emitting wavelength; a third semiconductor layer positioned on the active layer and including the non-doped nitride-based semiconductor; and a fourth semiconductor layer with a second conductivity positioned on the third semiconductor layer and including a nitride-based semiconductor.