| 摘要 |
<p>The present invention provides a manufacturing method of a solid imaging device and a solid imaging device capable of suppressing an afterimage or a white crack in an image. According to the present invention, in the manufacturing method of the solid imaging device, a transmission gate electrode is formed by placing a gate insulating film in a predetermined position on the upper surface of a first conductive semiconductor area. A second conductive charge accumulation area, accumulating a charge converted by a photoelectric conversion element, is formed in an adjacent area to the transmission gate electrode in the first conductive semiconductor area. A side wall is formed on the side of the transmission gate electrode. An insulating film, extended from an outer surface of the charge accumulation area to a position sheathing a part of an upper part of the charge accumulation area, is formed. A first conductive charge accumulation layer is formed on the upper surface of the charge accumulation area by injecting a conductive foreign matter into the charge accumulation area having the upper part partially sheathed by the insulating film.</p> |
