| 摘要 |
PURPOSE: A manufacturing method of a thin film transistor substrate is provided to laminate one more lift off pass layer during the third mask process and form a lift off path having an overhang structure by a web process, thereby preventing a lower film from being damaged. CONSTITUTION: A manufacturing method of a thin film transistor substrate comprises the following steps. A gate electrode pattern is formed on a lower plate(101). The gate electrode pattern includes a gate line, a gate electrode, a storage electrode, and a gate lower electrode(162). A gate insulating layer(112) is formed on the lower plate. A data metal pattern and a semiconductor pattern are formed on the gate insulating layer. A protection film and a lift off pass layer and the first and second photo resist patterns having different thickness are formed on the gate insulating layer. |
