Semiconductor device and manufacturing method thereof

摘要

It is an object of the present invention to provide a method for preventing a breaking and poor contact, without increasing the number of steps, thereby forming an integrated circuit with high driving performance and reliability. The present invention applies a photo mask or a reticle each of which is provided with a diffraction grating pattern or with an auxiliary pattern formed of a semi-translucent film having a light intensity reducing function to a photolithography step for forming wires in an overlapping portion of wires. And a conductive film to serve as a lower wire of a two-layer structure is formed, and then, a resist pattern is formed so that a first layer of the lower wire and a second layer narrower than the first layer are formed for relieving a steep step.

主权项

1. A semiconductor device, comprising:
a first wire on an insulating surface; a second wire over the first wire and extending in a same direction as the first wire; an insulating film over the second wire; a third wire over the insulating film, the third wire extending across the first wire and the second wire, a fourth wire on the insulating surface; and a fifth wire over the fourth wire and extending in a same direction as the fourth wire; wherein the third wire extends across the fourth wire and the fifth wire, wherein the first wire is wider than the second wire at a first crossing portion of the second wire and the third wire, and in a vicinity of the first crossing portion, and wherein the fourth wire is wider than the fifth wire at a second crossing portion of the second wire and the third wire, and in a vicinity of the second crossing portion.